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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 165.33333mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 40W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 307m Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 885pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 2A Ta 8.4A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Drain to Source Voltage (Vdss) | 150V |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±25V |
| Continuous Drain Current (ID) | 8.4A |
| Drain-source On Resistance-Max | 0.307Ohm |
| Pulsed Drain Current-Max (IDM) | 35A |
| DS Breakdown Voltage-Min | 150V |
| Avalanche Energy Rating (Eas) | 37 mJ |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMC86262P is a -150v P-Channel PowerTrench? MOSFET. This P-Channel MOSFET FDMC86262P is produced using Fairchild Semiconductor's advanced PowerTrench? technology. This very high-density process is specially tailored to minimize on-state resistance and optimized for superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FDMC86262P is in the Power-33-8 package with 40W power dissipation.
Max rDs(on)=307 mΩ at VGs=-10 V, lD=-2 A
Max rDs(on)= 356 mΩ at VGs=-6 V, lD=-1.8 A
Very Low rDs(on) Mid Voltage P-Channel Silicon Technology Optimised for Low Qg
Optimized for Fast Switching Applications as well as Load Switch Applications
100% UIL Tested
RoHS Compliant
Active Clamp Switch
Load Switch
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