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FDMC86260 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC86260
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 4702
- Description: FDMC86260 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 20 hours ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Length | 3.3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Radiation Hardening | No |
| Number of Pins | 8 |
| Package / Case | 8-PowerWDFN |
| Height | 750μm |
| Width | 3.3mm |
| Mounting Type | Surface Mount |
| Weight | 152.7mg |
| Operating Temperature | -55°C~150°C TJ |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Finish | Tin (Sn) |
| Terminal Position | DUAL |
| Base Part Number | FDMC86260 |
| JESD-30 Code | S-PDSO-N5 |
| Subcategory | FET General Purpose Power |
| Number of Elements | 1 |
| JEDEC-95 Code | MO-240BA |
| Case Connection | DRAIN |
| Element Configuration | Single |
| Power Dissipation | 54W |
| Turn On Delay Time | 9.5 ns |
| Power Dissipation-Max | 2.3W Ta 54W Tc |
| Continuous Drain Current (ID) | 16A |
| Transistor Application | SWITCHING |
| Drain-source On Resistance-Max | 0.034Ohm |
| Turn-Off Delay Time | 17 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 34m Ω @ 5.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1330pF @ 75V |
| Gate Charge (Qg) (Max) @ Vgs | 21nC @ 10V |
| Rise Time | 2ns |
| Fall Time (Typ) | 3.3 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 150V |
| Drain Current-Max (Abs) (ID) | 5.4A |
| Current - Continuous Drain (Id) @ 25°C | 5.4A Ta 16A Tc |
| Avalanche Energy Rating (Eas) | 121 mJ |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
FDMC86260 Description
FDMC86260 is an N-Channel Power Trench? MOSFET manufactured by onsemi. The N-Channel MOSFET FDMC86260 is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the transistor FDMC86260 is in the Power-33-8 package with 54w power dissipation.
FDMC86260 Features
Max rDS(on) = 34 mΩ at VGS = 10 V, ID = 5.4 A
Max rDS(on) = 44 mΩ at VGS = 6 V, ID = 4.8 A
High-performance technology for extremely low RDS(on)
100% UIL Tested
Termination is Lead-free
FDMC86260 Applications
cellular phones
laptop computers
photovoltaic systems
wind turbines
shunt voltage regulator and the series voltage regulator
