FDMC86184

FDMC86184 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMC86184
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 801
  • Description: FDMC86184 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 20 Weeks
Lifecycle Status ACTIVE (Last Updated: 16 hours ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Weight 152.7mg
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Series PowerTrench®
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 54W Tc
Element Configuration Single
FET Type N-Channel
Rds On (Max) @ Id, Vgs 8.5m Ω @ 21A, 10V
Vgs(th) (Max) @ Id 4V @ 110μA
Input Capacitance (Ciss) (Max) @ Vds 2090pF @ 50V
Current - Continuous Drain (Id) @ 25°C 57A Tc
Gate Charge (Qg) (Max) @ Vgs 20nC @ 6V
Drain to Source Voltage (Vdss) 100V
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
RoHS Status RoHS Compliant

FDMC86184 Description

This N-Channel MV MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that incorporates Shielded Gate technology. This process has been optimized to minimize on-state resistance and yet maintain superior switching performance with best in class soft body diode.


FDMC86184 Features

Shielded Gate MOSFET Technology

Max rDS(on) = 8.5 mΩ at VGS = 10 V, ID =21 A

Max rDS(on) = 24.8 mΩ at VGS = 6 V, ID = 10 A

50% Lower Qrr than Other MOSFET Suppliers

Lowers Switching Noise/EMI

MSL1 Robust Package Design

100% UIL Tested

RoHS Compliant


FDMC86184 Applications

Primary DC-DC MOSFET

Synchronous Rectifier in DC-DC and AC-DC

Motor Drive

Solar


In Stock

Please send RFQ , we will respond immediately.