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FDMC86160 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC86160
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 437
- Description: FDMC86160 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 20 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 15 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 152.7mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 54W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 54W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.7 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 14m Ω @ 9A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1290pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 9A Ta 43A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 22nC @ 10V |
| Rise Time | 3.6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3.4 ns |
| Turn-Off Delay Time | 16 ns |
| Continuous Drain Current (ID) | 43A |
| Threshold Voltage | 2.9V |
| JEDEC-95 Code | MO-240BA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 9A |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Height | 750μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMC86160 MOSFET Description
The FDMC86160 N-Channel MOSFET features low on-resistance for sufficient current flow and adequate power savings. For switching performance, the FDMC86160 has a low gate charge (22 nc at top); besides, this MOSFET has a maximum turn-on delay time of 19 ns and the maximum rise time is specified as 10 ns.
FDMC86160 MOSFET Features
Shielded Gate MOSFET Technology
Max rDS(on) = 14 mΩ at VGS = 10 V, ID = 9 A
Max rDS(on) = 23 mΩ at VGS = 6 V, ID = 7 A
High-performance technology for extremely low rDS(on)
Termination is Lead-free and RoHS Compliant
FDMC86160 MOSFET Applications
DC-DC Merchant Power Supply
LED Backlighting
Repetitive UIS Rating System
LLC Resonant Converters
Synchronous Rectification Applications
