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ContactFDMC86106LZ
MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 103mOhm @ 3.3A, 10V 310pF @ 50V 6nC @ 10V 100V 8-PowerWDFN
- Manufacturer: ON Semiconductor
- NO: 598-FDMC86106LZ
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 3130
- Description: MOSFET (Metal Oxide) N-Channel Cut Tape (CT) 103mOhm @ 3.3A, 10V 310pF @ 50V 6nC @ 10V 100V 8-PowerWDFN (Kg)
- Delivery:
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| Parameters | |
|---|---|
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Supplier Device Package | 8-MLP (3.3x3.3) |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Series | PowerTrench® |
| Published | 2013 |
| Part Status | Discontinued |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 19W Tc |
| Power Dissipation | 19W |
| Turn On Delay Time | 4.5 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 103mOhm @ 3.3A, 10V |
| Vgs(th) (Max) @ Id | 2.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 310pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 3.3A Ta 7.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 10V |
| Rise Time | 1.3ns |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time (Typ) | 1.4 ns |
| Turn-Off Delay Time | 10 ns |
| Continuous Drain Current (ID) | 7.5A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Input Capacitance | 310pF |
| Drain to Source Resistance | 103mOhm |
| Rds On Max | 103 mΩ |
| Height | 750μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
