FDMC7678

FDMC7678 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMC7678
  • Package: 8-PowerWDFN
  • Datasheet: pdf
  • Stock: 1849
  • Description: FDMC7678 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Vgs(th) (Max) @ Id 3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2410pF @ 15V
Current - Continuous Drain (Id) @ 25°C 17.5A Ta 19.5A Tc
Gate Charge (Qg) (Max) @ Vgs 39nC @ 10V
Rise Time 4ns
Drive Voltage (Max Rds On,Min Rds On) 4.5V 10V
Vgs (Max) ±20V
Fall Time (Typ) 3 ns
Turn-Off Delay Time 26 ns
Continuous Drain Current (ID) 17.5A
Threshold Voltage 1.5V
JEDEC-95 Code MO-240BA
Gate to Source Voltage (Vgs) 20V
Drain-source On Resistance-Max 0.0053Ohm
Drain to Source Breakdown Voltage 30V
Pulsed Drain Current-Max (IDM) 70A
Avalanche Energy Rating (Eas) 54 mJ
Height 750μm
Length 3.3mm
Width 3.3mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 23 Weeks
Lifecycle Status ACTIVE (Last Updated: 6 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerWDFN
Number of Pins 8
Weight 180mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2006
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
Additional Feature ULTRA-LOW RESISTANCE
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
JESD-30 Code S-PDSO-N5
Number of Elements 1
Power Dissipation-Max 2.3W Ta 31W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 31W
Case Connection DRAIN
Turn On Delay Time 10 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 5.3m Ω @ 17.5A, 10V

Description


The FDMC7678 is an N-Channel Power Trench? MOSFET with 30V, 19.5A, 5.3mΩ. This N-Channel MOSFET is made utilizing the cutting-edge Power Trench? technique from Fairchild Semiconductor, which has been carefully designed to reduce the on-state resistance. This device is highly suited for Power Management and loads switching tasks that are frequently carried out by portable battery packs and notebook computers.



Features


  • Use with or without a heat sink reduces the number of qualified components in the BOM

  • Multiple suppliers without cross-licensing requirements

  • High degree of production commonality with standard PQFN packaging

  • 25 V - 150 V portfolio

  • Top-side cooling, lower thermal resistance from junction to top

  • Same land pattern as 5 mm x 6 mm and 3.3 mm x 3.3 mm PQFN – JEDEC standard

  • Allows higher current and power dissipation

  • Highest power density for DC-DC applications



Applications


  • Telecommunications, routing and switching

  • Heat path from top only

  • Point-of-load (POL) synchronous-buck conversion

  • Servers

  • DC-DC Buck Converters

  • Notebook battery power management

  • Load switch in Notebook


In Stock

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