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| Parameters | |
|---|---|
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2410pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 17.5A Ta 19.5A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 39nC @ 10V |
| Rise Time | 4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 3 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 17.5A |
| Threshold Voltage | 1.5V |
| JEDEC-95 Code | MO-240BA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.0053Ohm |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 70A |
| Avalanche Energy Rating (Eas) | 54 mJ |
| Height | 750μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 180mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 31W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 31W |
| Case Connection | DRAIN |
| Turn On Delay Time | 10 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 5.3m Ω @ 17.5A, 10V |
The FDMC7678 is an N-Channel Power Trench? MOSFET with 30V, 19.5A, 5.3mΩ. This N-Channel MOSFET is made utilizing the cutting-edge Power Trench? technique from Fairchild Semiconductor, which has been carefully designed to reduce the on-state resistance. This device is highly suited for Power Management and loads switching tasks that are frequently carried out by portable battery packs and notebook computers.
Use with or without a heat sink reduces the number of qualified components in the BOM
Multiple suppliers without cross-licensing requirements
High degree of production commonality with standard PQFN packaging
25 V - 150 V portfolio
Top-side cooling, lower thermal resistance from junction to top
Same land pattern as 5 mm x 6 mm and 3.3 mm x 3.3 mm PQFN – JEDEC standard
Allows higher current and power dissipation
Highest power density for DC-DC applications
Telecommunications, routing and switching
Heat path from top only
Point-of-load (POL) synchronous-buck conversion
Servers
DC-DC Buck Converters
Notebook battery power management
Load switch in Notebook
Please send RFQ , we will respond immediately.