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FDMC612PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC612PZ
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 5117
- Description: FDMC612PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Lifecycle Status | CONSULT SALES OFFICE (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 180mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | NO LEAD |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 2.3W Ta 26W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.3W |
| Case Connection | DRAIN |
| Turn On Delay Time | 26 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8.4m Ω @ 14A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7995pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 14A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 74nC @ 4.5V |
| Rise Time | 52ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 81 ns |
| Turn-Off Delay Time | 96 ns |
| Continuous Drain Current (ID) | 14A |
| JEDEC-95 Code | MO-240BA |
| Gate to Source Voltage (Vgs) | 12V |
| Drain Current-Max (Abs) (ID) | 40A |
| Pulsed Drain Current-Max (IDM) | 50A |
| DS Breakdown Voltage-Min | 20V |
| Height | 750μm |
| Length | 3.3mm |
| Width | 3.3mm |
| RoHS Status | RoHS Compliant |
FDMC612PZ Description
Fairchild Semiconductor's innovative PowerTrench? process is used to make this P-Channel MOSFET, which has been tuned for rDS(0N), switching performance, and robustness. These devices are designed to ensure a high level of dv/dt capability for the most demanding applications, in addition to a significant reduction in on-resistance.
FDMC612PZ Features
At Vgg = -4.5 V, Iq = -14 A, MaxDs(on) = 844 mQ.
At Vgg = -2.5 V, Iq = -11 A, MaxDS(on)= 43 mfl.
High power and current handling capability in a widely used surface mount package with high performance trench technology for extremely low rDS(on).
Tefmination is RoHS compliant and lead-free. HBM ESD capability level > 3.6 KV is normal (Note 4)
FDMC612PZ Applications
Battery Management is a term that refers to the process of managing a battery.
Activate the load switch
