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FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMC510P
- Package: 8-PowerWDFN
- Datasheet:
- Stock: 1367
- Description: FDMC510P datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gate Charge (Qg) (Max) @ Vgs | 116nC @ 4.5V |
| Rise Time | 34ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 170 ns |
| Turn-Off Delay Time | 338 ns |
| Continuous Drain Current (ID) | 12A |
| Threshold Voltage | -500mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 54A |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 50A |
| Avalanche Energy Rating (Eas) | 37 mJ |
| Height | 750μm |
| Length | 3.3mm |
| Width | 3.3mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Factory Lead Time | 23 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Gold |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-PowerWDFN |
| Number of Pins | 8 |
| Weight | 165.33333mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 5 |
| ECCN Code | EAR99 |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| JESD-30 Code | S-PDSO-N5 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.3W Ta 41W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 41W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 8m Ω @ 12A, 4.5V |
| Vgs(th) (Max) @ Id | 1V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 7860pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 12A Ta 18A Tc |
FDMC510P Description
FDMC510P P-Channel MOSFET provides the most efficient RDS(on) together with an optimized BVDSS capability. FDMC510P MOSFET enables better performance in the application and also better switching capabilities to minimize the power loss in converters and inverter systems. FDMC510P ON Semiconductor is a general-purpose device and can be used in Battery Management and Control switches.
FDMC510P Features
Extended VGS range
Very Low RDS(on)
Improve system efficiency
Handling capability with High power and current
Terminal Lead-Free
FDMC510P Applications
Battery Management
Control Switch
Synchronous & Non-Synchronous Buck
Load Switch
Inverter
