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FDMA910PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDMA910PZ
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 7510
- Description: FDMA910PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Power Dissipation-Max | 2.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9.4 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 9.4A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 2805pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 9.4A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 4.5V |
| Rise Time | 19ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 103 ns |
| Turn-Off Delay Time | 135 ns |
| Continuous Drain Current (ID) | 9.4A |
| Threshold Voltage | -500mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain-source On Resistance-Max | 0.02Ohm |
| Drain to Source Breakdown Voltage | -20V |
| Feedback Cap-Max (Crss) | 580 pF |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDMA910PZ Description
FDMA910PZ is designed specifically for battery charge or load switching in cellular handsets and other ultraportable applications. It features a MOSFET with low on-state resistance and Zener diode protection against ESD. The MicroFET 2X2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
FDMA910PZ Features
RoHS Compliant
Max rDS(on) = 20 mΩ at VGS = -4.5 V, ID = -9.4 A
Max rDS(on) = 24 mΩ at VGS = -2.5 V, ID = -8.6 A
Max rDS(on) = 34 mΩ at VGS = -1.8 V, ID = -7.2 A
HBM ESD protection level > 2.8k V typical (Note 3)
Free from halogenated compounds and antimony oxides
Low Profile - 0.8 mm maximum in the new package MicroFET 2x2 mm
FDMA910PZ Applications
Mobile handsets
Portable navigation
