FDMA7628

MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14.5m Ω @ 9.4A, 4.5V ±8V 1680pF @ 10V 17.5nC @ 4.5V 6-WDFN Exposed Pad


  • Manufacturer: ON Semiconductor
  • NO: 598-FDMA7628
  • Package: 6-WDFN Exposed Pad
  • Datasheet: pdf
  • Stock: 30536
  • Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 14.5m Ω @ 9.4A, 4.5V ±8V 1680pF @ 10V 17.5nC @ 4.5V 6-WDFN Exposed Pad (Kg)

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SPECIFICATIONS

Parameters
Weight 30mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2009
Series PowerTrench®
JESD-609 Code e4
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
ECCN Code EAR99
Terminal Finish Nickel/Palladium/Gold (Ni/Pd/Au)
HTS Code 8541.29.00.95
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Number of Elements 1
Power Dissipation-Max 1.9W Ta
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.9W
Case Connection DRAIN
Turn On Delay Time 9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 14.5m Ω @ 9.4A, 4.5V
Vgs(th) (Max) @ Id 1V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1680pF @ 10V
Current - Continuous Drain (Id) @ 25°C 9.4A Ta
Gate Charge (Qg) (Max) @ Vgs 17.5nC @ 4.5V
Rise Time 11ns
Drive Voltage (Max Rds On,Min Rds On) 1.5V 4.5V
Vgs (Max) ±8V
Fall Time (Typ) 11 ns
Turn-Off Delay Time 37 ns
Continuous Drain Current (ID) 9.4A
Gate to Source Voltage (Vgs) 8V
Drain-source On Resistance-Max 0.0145Ohm
Drain to Source Breakdown Voltage 20V
Feedback Cap-Max (Crss) 185 pF
Height 750μm
Length 2mm
Width 2mm
Radiation Hardening No
RoHS Status RoHS Compliant
Lifecycle Status LAST SHIPMENTS (Last Updated: 4 days ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 6-WDFN Exposed Pad
Number of Pins 6

In Stock

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