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FDG332PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDG332PZ
- Package: 6-TSSOP, SC-88, SOT-363
- Datasheet:
- Stock: 5076
- Description: FDG332PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-TSSOP, SC-88, SOT-363 |
| Number of Pins | 6 |
| Weight | 28mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2008 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 95MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 750mW Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 750mW |
| Turn On Delay Time | 5.2 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 2.6A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 560pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 2.6A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10.8nC @ 4.5V |
| Rise Time | 4.8ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 4.8 ns |
| Turn-Off Delay Time | 59 ns |
| Continuous Drain Current (ID) | 2.6A |
| Threshold Voltage | -700mV |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Height | 1mm |
| Length | 2mm |
| Width | 1.25mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDG332PZ Description
FDG332PZ is a P-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 20V. The operating temperature of FDG332PZ is -55°C~150°C TJ and its maximum power dissipation is 750mW. This P-Channel MOSFET uses Fairchild’s advanced low voltage PowerTrench? process. It has been optimized for battery power management applications.
FDG332PZ Features
Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -2.6A
Max rDS(on) = 115mΩ at VGS = -2.5V, ID = -2.2A
Max rDS(on) = 160mΩ at VGS = -1.8V, ID = -1.9A
Max rDS(on) = 330mΩat VGS = -1.5V, ID = -1.0A
Very low level gate drive requirements allowing operationin 1.5V circuits
Very small package outline SC70-6
RoHS Compliant
FDG332PZ Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
