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FDFS6N548 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDFS6N548
- Package: 8-SOIC (0.154, 3.90mm Width)
- Datasheet:
- Stock: 5567
- Description: FDFS6N548 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 18 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 8-SOIC (0.154, 3.90mm Width) |
| Number of Pins | 8 |
| Weight | 187mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 8 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 23MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 2W |
| Turn On Delay Time | 6 ns |
| Forward Current | 2mA |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 23m Ω @ 7A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 700pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 13nC @ 10V |
| Rise Time | 2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Forward Voltage | 450mV |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 14 ns |
| Continuous Drain Current (ID) | 7A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 30V |
| Pulsed Drain Current-Max (IDM) | 30A |
| Dual Supply Voltage | 30V |
| FET Feature | Schottky Diode (Isolated) |
| Nominal Vgs | 1.8 V |
| Height | 1.5mm |
| Length | 5mm |
| Width | 4mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDFS6N548 Description
FDFS6N548 is a 30v Integrated N-Channel POWERTRENCH? MOSFET and Schottky Diode. The FDFS6N548 combines the exceptional performance of ON Semiconductor’s PowerTrench MOSFET technology with a very low forward voltage drop Schottky barrier rectifier in a SO?8 package. The FDFS6N548 is designed specifically as a single package solution for DC to DC converters. It features a fast switching, low gate charge MOSFET with very low on?state resistance. The independently connected Schottky diode allows its use in a variety of DC/DC converter topologies
FDFS6N548 Features
Max rDS(on) = 23mΩ at VGS = 10V, ID = 7A
Max rDS(on) = 30mΩ at VGS = 4.5V, ID = 6A
VF < 0.45V @ 2A
VF < 0.28V @ 100mA
Schottky and MOSFET incorporated into single power surface mount SO-8 package
Electrically independent Schottky and MOSFET pinout for design flexibility
Low Miller Charge
FDFS6N548 Applications
Cellular phones
Laptop computers
Photovoltaic systems
Wind turbines
Shunt voltage regulator and the series voltage regulator
