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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 120MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.4W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 120m Ω @ 3A, 4.5V |
| Vgs(th) (Max) @ Id | 1.3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 435pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 6nC @ 4.5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 1.8V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 15 ns |
| Continuous Drain Current (ID) | 3A |
| JEDEC-95 Code | MO-229VCCC |
| Collector Emitter Breakdown Voltage | 2V |
| Gate to Source Voltage (Vgs) | 8V |
| Drain Current-Max (Abs) (ID) | 2.2A |
| Drain to Source Breakdown Voltage | 20V |
| FET Feature | Schottky Diode (Isolated) |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
This FDFMA2P853 is designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultra-portable applications. It features a MOSFET with low on-state resistance and an independently connected low forward voltage Schottky diode for minimum conduction losses. The MicroFET 2x2 package offers exceptional thermal performance for its physical size and is well suited to linear mode applications.
-3.0 A, -20V.
RDS(ON) = 120 mΩ @ VGS = -4.5 V
RDS(ON) = 160 mΩ @ VGS = -2.5 V
RDS(ON) = 240 mΩ @ VGS = -1.8 V
VF < 0.46 V @ 500 mA
Low Profile - 0.8 mm maximun - in the new packageMicroFET 2x2 mm
RoHS Compliant
Power Management
Consumer Electronics
Portable Devices
Industrial
Please send RFQ , we will respond immediately.