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ContactFDFMA2P029Z
FDFMA2P029Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDFMA2P029Z
- Package: 6-VDFN Exposed Pad
- Datasheet:
- Stock: 6088
- Description: FDFMA2P029Z datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 16 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | 6-VDFN Exposed Pad |
| Number of Pins | 6 |
| Weight | 40mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e4 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Resistance | 95MOhm |
| Terminal Finish | Nickel/Palladium/Gold (Ni/Pd/Au) |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Current Rating | -3.1A |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.4W Tj |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.4W |
| Case Connection | DRAIN |
| Turn On Delay Time | 13 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 95m Ω @ 3.1A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 720pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 3.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 10nC @ 4.5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 11 ns |
| Turn-Off Delay Time | 37 ns |
| Continuous Drain Current (ID) | -3.1A |
| JEDEC-95 Code | MO-229VCCC |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | 20V |
| FET Feature | Schottky Diode (Isolated) |
| Height | 750μm |
| Length | 2mm |
| Width | 2mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDFMA2P029Z Description
FDFMA2P029Z is a -20V Integrated P-Channel PowerTrench? MOSFET and Schottky Diode. The FDFMA2P029Z is designed specifically as a single package solution for the battery charge switch in cellular handsets and other ultraportable applications. It features a MOSFET with very low state resistance and an independently connected low forward voltage Schottky diode that allows for minimum conduction losses.
FDFMA2P029Z Features
Max rDS(on) = 95mΩ at VGS = -4.5V, ID = -3.1A
Max rDS(on) = 141mΩ at VGS = -2.5V, ID = -2.5A
HBM ESD protection level > 2.5kV (Note 3)
Schottky
VF < 0.37V @ 500mA
Low profile - 0.8 mm maximum - in the new package MicroFET 2x2 mm
RoHS Compliant
FDFMA2P029Z Applications
Class-A audio amplifiers
Active DC-link discharge
Battery charge-discharge
Inrush current limiter
Low-voltage DC motor control
Electronic loads
