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FDD86540
  • FDD86540

FDD86540

FDD86540 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDD86540
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 6422
  • Description: FDD86540 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Number of Pins 3
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2010
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 3.1W Ta 127W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 127W
Case Connection DRAIN
Turn On Delay Time 26 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 4.1m Ω @ 21.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 6340pF @ 30V
Current - Continuous Drain (Id) @ 25°C 21.5A Ta 50A Tc
Gate Charge (Qg) (Max) @ Vgs 90nC @ 10V
Rise Time 15ns
Drive Voltage (Max Rds On,Min Rds On) 8V 10V
Vgs (Max) ±20V
Fall Time (Typ) 6.9 ns
Turn-Off Delay Time 31 ns
Continuous Drain Current (ID) 21.5A
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 50A
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 228 mJ
Height 2.39mm
Length 6.73mm
Width 6.22mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDD86540 Description


FDD86540 is a 60V N-Channel PowerTrench? MOSFET. The N-Channel MOSFET FDD86540 has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on), fast switching speed and body diode reverse recovery performance.



FDD86540 Features


  • Max rDS(on) = 4.1 mΩ at VGS = 10 V, ID = 21.5 A

  • Max rDS(on) = 5 mΩ at VGS = 8 V, ID = 19.5 A

  • 100% UIL tested

  • RoHS Compliant

  • Power Dissipation: 127W



FDD86540 Applications


  • Primary Switch in isolated DC-DC

  • Synchronous Rectifier

  • USB Type C High-end Smartphones & Tablet PCs

  • Point-of-Load Power Distribution in 5 V, 12 V, 15 V, and 20 V systems

  • Enterprise Computing and Telecom Equipment

  • Multifunction Printers

  • Fan Motor Drives

  • Enterprise Copiers

  • Set-top Boxes

  • General-purpose, High-voltage Power-Rail Switching

  • PCIe/PCI Adapter Cards


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