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FDD86102 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD86102
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 6731
- Description: FDD86102 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 62W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 7.6 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 24m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1035pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 8A Ta 36A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 19nC @ 10V |
| Rise Time | 3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.9 ns |
| Turn-Off Delay Time | 13.4 ns |
| Continuous Drain Current (ID) | 36A |
| Threshold Voltage | 3.1V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain-source On Resistance-Max | 0.024Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 40A |
| Height | 2.39mm |
| Length | 6.73mm |
FDD86102 Description
FDD86102 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. This N-Channel MOSFET is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance and ruggedness.
FDD86102 Features
Max rDS(on) = 24 mΩ at VGS = 10 V, ID = 8 A
Max rDS(on) = 38 mΩ at VGS = 6 V, ID = 6 A
High performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Very low Qg and Qgd compared to competing trench technologies
Fast switching speed
100% UIL tested
RoHS Compliant
FDD86102 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
