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ContactFDD850N10LD
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 75m Ω @ 12A, 10V ±20V 1465pF @ 25V 28.9nC @ 10V TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Manufacturer: ON Semiconductor
- NO: 598-FDD850N10LD
- Package: TO-252-5, DPak (4 Leads + Tab), TO-252AD
- Datasheet:
- Stock: 4081
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 75m Ω @ 12A, 10V ±20V 1465pF @ 25V 28.9nC @ 10V TO-252-5, DPak (4 Leads + Tab), TO-252AD (Kg)
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| Parameters | |
|---|---|
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Obsolete |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 4 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G4 |
| Number of Elements | 1 |
| Power Dissipation-Max | 42W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 75m Ω @ 12A, 10V |
| Vgs(th) (Max) @ Id | 2.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1465pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15.3A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 28.9nC @ 10V |
| Rise Time | 21ns |
| Drive Voltage (Max Rds On,Min Rds On) | 5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 8 ns |
| Turn-Off Delay Time | 27 ns |
| Continuous Drain Current (ID) | 15.3A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.096Ohm |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 46A |
| Avalanche Energy Rating (Eas) | 41 mJ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| RoHS Status | RoHS Compliant |
| Lifecycle Status | LAST SHIPMENTS (Last Updated: 1 week ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-5, DPak (4 Leads + Tab), TO-252AD |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2013 |
FDD850N10LD Overview
Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 41 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 1465pF @ 25V maximal input capacitance.This device's continuous drain current (ID) is 15.3A, which represents the maximum continuous current it can conduct.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=100V, the drain-source breakdown voltage is 100V.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 27 ns.There is a peak drain current of 46A, its maximum pulsed drain current.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 17 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (5V 10V) reduces this device's overall power consumption.
FDD850N10LD Features
the avalanche energy rating (Eas) is 41 mJ
a continuous drain current (ID) of 15.3A
a drain-to-source breakdown voltage of 100V voltage
the turn-off delay time is 27 ns
based on its rated peak drain current 46A.
FDD850N10LD Applications
There are a lot of ON Semiconductor FDD850N10LD applications of single MOSFETs transistors.
- AC-DC Power Supply
- Synchronous Rectification for ATX 1 Server I Telecom PSU
- Load switching
- DC-to-DC converters
- Consumer Appliances
- Motor drives and Uninterruptible Power Supplies
- Motor Drives and Uninterruptible Power Supples
- LCD/LED TV
- Power Management Functions
- Micro Solar Inverter
