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FDD6685 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD6685
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 1504
- Description: FDD6685 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 17 hours ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2004 |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 20MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | -40A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 52W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 52W |
| Case Connection | DRAIN |
| Turn On Delay Time | 17 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 20m Ω @ 11A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1715pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 11A Ta 40A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 5V |
| Rise Time | 11ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 21 ns |
| Turn-Off Delay Time | 43 ns |
| Continuous Drain Current (ID) | -40A |
| Threshold Voltage | -1.8V |
| Gate to Source Voltage (Vgs) | 25V |
| Drain to Source Breakdown Voltage | -30V |
| Dual Supply Voltage | 30V |
| Nominal Vgs | 1.8 V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
FDD6685 Description
The FDD6685 is a 30v P-channel MOSFET. The onsemi FDD6685 is a rugged gate version of the advanced PowerTrench? process, with a fast switching speed and high-performance trench technology for extremely low RDS(ON). It is designed for power management applications due to the following features. The Operating and Storage Temperature Range is between -55 and 175℃. And the Transistor FDD6685 is in the DPAK-3 package with 52W power dissipation.
FDD6685 Features
-40A, -30V
RDS(ON) = 20 mΩ @ VGS = -10V
RDS(ON) = 30 mΩ @ VGS = -4.5V
Fast switching speed
High-performance trench technology for extremely low RDS(ON)
High power and current handling capability
FDD6685 Applications
Induction furnaces
Arc furnaces and arc welders
Steel rolling mills
Large motors with periodic loading
Thyristor drives
