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ContactFDD6530A
FDD6530A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD6530A
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8526
- Description: FDD6530A datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 14 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 20V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 21A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.3W Ta 33W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 33W |
| Case Connection | DRAIN |
| Turn On Delay Time | 8 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 32m Ω @ 8A, 4.5V |
| Vgs(th) (Max) @ Id | 1.2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 710pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 21A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 9nC @ 4.5V |
| Rise Time | 7ns |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±8V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 18 ns |
| Continuous Drain Current (ID) | 21A |
| Gate to Source Voltage (Vgs) | 8V |
| Drain to Source Breakdown Voltage | 20V |
| Avalanche Energy Rating (Eas) | 55 mJ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The FDD6530A is a PowerTrench? MOSFET with a 20V N-Channel. This N-Channel MOSFET was created with the goal of increasing the overall efficiency of DC/DC converters using synchronous or traditional switching PWM controllers. Low gate charge, low RDS(ON), and quick switching speed have all been tuned.
FDD6530A Features
● 21 A, 20 V RDS(ON) = 32 mW @ VGS = 4.5 V
RDS(ON) = 47 mW @ VGS = 2.5 V
● Low gate charge (6.5 nC typical)
● Fast switching
● High performance trench technology for extremely low RDS(ON)
● Lower RDS(on) and gate capacitance
FDD6530A Applications
● DC/DC Converter
● Motor Drives
● Switching Devices
● Power Converters
● Digital Circuits
