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| Parameters | |
|---|---|
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 40m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1285pF @ 75V |
| Current - Continuous Drain (Id) @ 25°C | 26A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18.6nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 20 ns |
| Continuous Drain Current (ID) | 26A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.04Ohm |
| Drain to Source Breakdown Voltage | 150V |
| Avalanche Energy Rating (Eas) | 78 mJ |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 hours ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 2 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Cut Tape (CT) |
| Published | 2010 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Power Dissipation-Max | 63W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 63W |
| Case Connection | DRAIN |
| Turn On Delay Time | 14 ns |
FDD390N15A is a 150v N-Channel PowerTrench? MOSFET. This N-Channel MOSFET FDD390N15A is produced using Fairchild Semiconductor's advanced PowerTrench process that has been tailored to minimize the on-state resistance while maintaining superior switching performance. The Operating and Storage Temperature Range is between -55 and 150℃. And the MOSFET FDD390N15A is in the DPAK-3 package with 63W power dissipation.
RDS(on) = 33.5m? ( Typ.)@ VGS = 10V, ID = 26A
Fast Switching Speed
Low Gate Charge, QG = 14.3nC ( Typ.)
High-Performance Trench Technology for Extremely Low RDS(on)
High Power and Current Handling Capability
RoHS Compliant
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