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ContactFDD3860
MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 36m Ω @ 5.9A, 10V ±20V 1740pF @ 50V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63
- Manufacturer: ON Semiconductor
- NO: 598-FDD3860
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 8838
- Description: MOSFET (Metal Oxide) N-Channel Tape & Reel (TR) 36m Ω @ 5.9A, 10V ±20V 1740pF @ 50V 31nC @ 10V TO-252-3, DPak (2 Leads + Tab), SC-63 (Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 week ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 36MOhm |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 3.1W Ta 69W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 3.1W |
| Case Connection | DRAIN |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 36m Ω @ 5.9A, 10V |
| Vgs(th) (Max) @ Id | 4.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1740pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 6.2A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 31nC @ 10V |
| Rise Time | 10ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 7 ns |
| Turn-Off Delay Time | 24 ns |
| Continuous Drain Current (ID) | 6.2A |
| Threshold Voltage | 3.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 42A |
| Drain to Source Breakdown Voltage | 100V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The FDD3860 is a 100V N-Channel PowerTrench MOSFET Using Fairchild's proprietary high density trench MOSFET process. This N-Channel MOSFET is rugged gate version of ON Semiconductor’s advanced Power Trench? process. This part is tailored for low rDS(on) and low Qg figure of merit, with avalanche ruggedness for a wide range of switching applications.
FDD3860 Features
● Max rDS(on) = 36 mΩ at VGS = 10 V, ID = 5.9 A
● High Performance Trench Technology for Extremely Low rDS(on)
● 100% UIL Tested
● RoHS Compliant
● Lead Free
● No SVHC
FDD3860 Applications
● DC-AC Conversion
● Synchronous Rectifier
● Switching applications
