FDD20AN06A0-F085

Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R


  • Manufacturer: ON Semiconductor
  • NO: 598-FDD20AN06A0-F085
  • Package: TO-252-3, DPak (2 Leads + Tab), SC-63
  • Datasheet: pdf
  • Stock: 9416
  • Description: Trans MOSFET N-CH 60V 45A 3-Pin(2+Tab) TO-252 T/R(Kg)

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  • Payment: payment

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SPECIFICATIONS

Parameters
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-252-3, DPak (2 Leads + Tab), SC-63
Weight 260.37mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Series Automotive, AEC-Q101, PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Terminal Form GULL WING
JESD-30 Code R-PSSO-G2
Number of Elements 1
Power Dissipation-Max 90W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 90W
Case Connection DRAIN
Turn On Delay Time 11 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 20m Ω @ 45A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 950pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Ta 45A Tc
Gate Charge (Qg) (Max) @ Vgs 19nC @ 10V
Rise Time 98ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 33 ns
Turn-Off Delay Time 23 ns
Continuous Drain Current (ID) 45A
JEDEC-95 Code TO-252AA
Gate to Source Voltage (Vgs) 20V
Drain Current-Max (Abs) (ID) 8A
Drain-source On Resistance-Max 0.02Ohm
Drain to Source Breakdown Voltage 60V
Avalanche Energy Rating (Eas) 50 mJ
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free

In Stock

Please send RFQ , we will respond immediately.