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ContactFDD13AN06A0
FDD13AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDD13AN06A0
- Package: TO-252-3, DPak (2 Leads + Tab), SC-63
- Datasheet:
- Stock: 2943
- Description: FDD13AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Number of Pins | 3 |
| Weight | 260.37mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 9.9A |
| Base Part Number | FDD13AN06 |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 115W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 115W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 13.5m Ω @ 50A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1350pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 9.9A Ta 50A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 29nC @ 10V |
| Rise Time | 77ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 50A |
| Threshold Voltage | 4V |
| JEDEC-95 Code | TO-252AA |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 60V |
| Dual Supply Voltage | 60V |
| Avalanche Energy Rating (Eas) | 56 mJ |
| Nominal Vgs | 4 V |
| Height | 2.39mm |
| Length | 6.73mm |
| Width | 6.22mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDM3622 Description
FDM3622 is an N-channel Power MOSFET transistor from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDM3622 is -55°C~150°C TJ and its maximum power dissipation is 2.1W. FDM3622 has 8 pins and it is available in Tape & Reel (TR) packaging way. The Turn On Delay Time of FDM3622 is 11 ns and its Turn-Off Delay Time is 35 ns.
FDM3622 Features
RDS(on) = 11.5m? (Typ.) @ VGS = 10V, ID = 50A
QG(tot) = 22nC (Typ.) @ VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
FDM3622 Applications
AC-DC Merchant Power Supply
AC-DC Merchant Power Supply - Servers & Workstations
AC-DC Merchant Power Supply - Desktop PC
Other Data Processing
