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ContactFDC8878
FDC8878 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC8878
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 4201
- Description: FDC8878 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Continuous Drain Current (ID) | 8A |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2011 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Power Dissipation | 800mW |
| Turn On Delay Time | 6 ns |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 16m Ω @ 8A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1040pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 8A Ta 8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 18nC @ 10V |
| Rise Time | 2ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 17 ns |
FDC8878 Description
FDC8878 N-Channel MOSFET is made using a unique, high cell density technology called DMOS. FDC8878 MOSFET is extremely dense and is designed to reduce the on-state resistance. FDC8878 ON Semiconductor is specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits.
FDC8878 Features
Proprietary Super
Electrical capabilities
High density cell design for extremely low RDS(ON)
Fast switching speed
FDC8878 Applications
Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
