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| Parameters | |
|---|---|
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 4.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 109m Ω @ 2.7A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 210pF @ 50V |
| Current - Continuous Drain (Id) @ 25°C | 2.7A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 5nC @ 10V |
| Rise Time | 1.3ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2 ns |
| Turn-Off Delay Time | 7.6 ns |
| Continuous Drain Current (ID) | 2.7A |
| Threshold Voltage | 3V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 100V |
| Nominal Vgs | 3 V |
| Feedback Cap-Max (Crss) | 5 pF |
| Height | 1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
FDC8601 is an N-channel Power MOSFET from the manufacturer ON Semiconductor with a voltage of 100V. The operating temperature of FDC8601 is -55°C~150°C TJ and its maximum power dissipation are 1.6W Ta. FDC8601 has 6 pins and it is available in Tape & Reel (TR) packaging way. The FDC8601 is an N-channel MOSFET produced using the advanced Power Trench? process. It is suitable for use in load switch, synchronous rectifier, and primary switch applications.
High performance trench technology for extremely low RDS (ON)
High power and current handling capability in a widely used surface-mount package
Fast switching speed
100% UIL tested
Power Management
Consumer Electronics
Portable Devices
Industrial
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