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ContactFDC655BN
FDC655BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC655BN
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 2500
- Description: FDC655BN datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Surface Mount |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Length | 3mm |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Contact Plating | Tin |
| Current Rating | 6.3A |
| Number of Pins | 6 |
| Additional Feature | ULTRA-LOW RESISTANCE |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| REACH SVHC | No SVHC |
| Height | 1.1mm |
| Width | 1.7mm |
| Resistance | 25MOhm |
| Mounting Type | Surface Mount |
| Weight | 36mg |
| Operating Temperature | -55°C~150°C TJ |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Operating Mode | ENHANCEMENT MODE |
| JESD-609 Code | e3 |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Channels | 1 |
| Subcategory | FET General Purpose Power |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Element Configuration | Single |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 6 ns |
| Threshold Voltage | 1.9V |
| Power Dissipation-Max | 1.6W Ta |
| Continuous Drain Current (ID) | 6.3A |
| Max Junction Temperature (Tj) | 150°C |
| Transistor Application | SWITCHING |
| Turn-Off Delay Time | 15 ns |
| Transistor Element Material | SILICON |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 25m Ω @ 6.3A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 570pF @ 15V |
| Gate Charge (Qg) (Max) @ Vgs | 15nC @ 10V |
| Rise Time | 4ns |
| Fall Time (Typ) | 4 ns |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 30V |
| Nominal Vgs | 1.9 V |
| Current - Continuous Drain (Id) @ 25°C | 6.3A Ta |
| Feedback Cap-Max (Crss) | 90 pF |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
FDC655BN Description
FDC655BN is a type of N-Channel logic-level MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to minimize the on-state resistance while maintaining superior switching performance. Due to its specific characteristics and reliable performance, it is ideally suitable for low-voltage and battery-powered applications requiring low in-line power loss and fast switching.
FDC655BN Features
Low gate charge
Low RDS (on)
Low on-state resistance
Superior switching performance
Available in the SuperSOT-6 package
FDC655BN Applications
low-voltage and battery-powered applications
Uninterruptible power supplies
Synchronous rectification
