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FDC653N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC653N
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 9246
- Description: FDC653N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 30mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 1997 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 35MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 30V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Current Rating | 5A |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 7.5 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 35m Ω @ 5A, 10V |
| Vgs(th) (Max) @ Id | 2V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 350pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 17nC @ 10V |
| Rise Time | 12ns |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 13 ns |
| Continuous Drain Current (ID) | 5A |
| Threshold Voltage | 1.7V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 5A |
| Drain to Source Breakdown Voltage | 30V |
| Dual Supply Voltage | 30V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | 1.7 V |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDC653N N-Channel Enhancement Mode Power Field-Effect Transistors are made using a unique, high cell density technology called DMOS. This process is extremely dense and is designed to reduce the on-state resistance. These devices are specifically designed for applications with low voltage in notebook computers, mobile phones, PCMICA cards, and many other battery-powered circuits in which fast switching, as well as low power loss in the line.
FDC653N Features
RDS(ON) = 0.035 Ω @ VGS = 10 V
RDS(ON) = 0.055 Ω @ VGS = 4.5 V
Proprietary SuperSOTTM-6 package design using copper lead frame for superior thermal and electrical capabilities
High density cell design for extremely low RDS(ON)
Exceptional on-resistance and maximum DC current capability
FDC653N Applications
Notebook computers
Portable phones
PCMICA cards
Battery powered circuits
