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FDC638APZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC638APZ
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 606
- Description: FDC638APZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Threshold Voltage | -800mV |
| Gate to Source Voltage (Vgs) | 12V |
| Drain to Source Breakdown Voltage | -20V |
| Pulsed Drain Current-Max (IDM) | 20A |
| Dual Supply Voltage | -20V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 43MOhm |
| Subcategory | Other Transistors |
| Voltage - Rated DC | -12V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Current Rating | -4.5A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 6 ns |
| FET Type | P-Channel |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 4.5A, 4.5V |
| Vgs(th) (Max) @ Id | 1.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 4.5A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 12nC @ 4.5V |
| Rise Time | 20ns |
| Drain to Source Voltage (Vdss) | 20V |
| Drive Voltage (Max Rds On,Min Rds On) | 2.5V 4.5V |
| Vgs (Max) | ±12V |
| Fall Time (Typ) | 20 ns |
| Turn-Off Delay Time | 48 ns |
| Continuous Drain Current (ID) | -4.5A |
FDC638APZ Description
FDC638APZ is a type of P-channel PowerTrench? MOSFET provided by ON Semiconductor based on the advanced PowerTrench? process. It is able to provide low on-state resistance while maintaining a fast switching speed. Due to its specific characteristics and reliable performance, it is ideally suitable for load switching and power management, battery charging circuits, and DC/DC conversion.
FDC638APZ Features
Low gate charge
Low RDS (on)
Low on-state resistance
Superior switching performance
Available in the SuperSOT-6 package
FDC638APZ Applications
Load switching
Power management
Battery charging circuits
DC/DC conversion
