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FDC610PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC610PZ
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 6822
- Description: FDC610PZ datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Drain Current-Max (Abs) (ID) | 4.9A |
| Drain-source On Resistance-Max | 0.042Ohm |
| Drain to Source Breakdown Voltage | -30V |
| Max Junction Temperature (Tj) | 150°C |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 7 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 42m Ω @ 4.9A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1005pF @ 15V |
| Current - Continuous Drain (Id) @ 25°C | 4.9A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 24nC @ 10V |
| Rise Time | 4ns |
| Drain to Source Voltage (Vdss) | 30V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±25V |
| Fall Time (Typ) | 4 ns |
| Turn-Off Delay Time | 33 ns |
| Continuous Drain Current (ID) | 4.9mA |
| Threshold Voltage | -2.2V |
| Gate to Source Voltage (Vgs) | 25V |
FDC610PZ Description
This P-Channel MOSFET is produced using ON Semiconductor's advanced PowerTrench? process that has been especially tailored to minimize the on-state resistance and yet maintain low gate charge for superior switching performance.
These devices are well suited for battery power applications: load switching and power management, battery charging
circuits, and DC/DC conversion.
FDC610PZ Features
Max rDS(on) = 42m? at VGS = –10V, ID = –4.9A
?Max rDS(on) = 75m? at VGS = –4.5V, ID = –3.7A
?Low gate charge (17nC typical).
?High performance trench technology for extremely low rDS(on).
?SuperSOTTM –6 package: small footprint (72% smaller than
standard SO–8) low profile (1mm thick).
?RoHS Compliant
FDC610PZ Applications
DC - DC Conversion
