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ContactFDC3535
FDC3535 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDC3535
- Package: SOT-23-6 Thin, TSOT-23-6
- Datasheet:
- Stock: 3626
- Description: FDC3535 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Feedback Cap-Max (Crss) | 40 pF |
| Height | 1.1mm |
| Length | 3mm |
| Width | 1.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Number of Pins | 6 |
| Weight | 36mg |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2017 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 6 |
| ECCN Code | EAR99 |
| Terminal Finish | TIN |
| Subcategory | Other Transistors |
| Technology | MOSFET (Metal Oxide) |
| Terminal Position | DUAL |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | 260 |
| Time@Peak Reflow Temperature-Max (s) | 30 |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 1.6W Ta |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 1.6W |
| Turn On Delay Time | 6.5 ns |
| FET Type | P-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 183m Ω @ 2.1A, 10V |
| Vgs(th) (Max) @ Id | 3V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 880pF @ 40V |
| Current - Continuous Drain (Id) @ 25°C | 2.1A Ta |
| Gate Charge (Qg) (Max) @ Vgs | 20nC @ 10V |
| Rise Time | 3.1ns |
| Drain to Source Voltage (Vdss) | 80V |
| Drive Voltage (Max Rds On,Min Rds On) | 4.5V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 2.9 ns |
| Turn-Off Delay Time | 23 ns |
| Continuous Drain Current (ID) | -2.1A |
| Threshold Voltage | -1.6V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | -80V |
| Max Junction Temperature (Tj) | 150°C |
| Nominal Vgs | -1.6 V |
FDC3535 MOSFET Description
This P-Channel MOSFET FDC3535 is produced using an advanced Power Trench? process that has been optimized for rDS(on), switching performance, and ruggedness. The FDC3535 has a maximum on-resistance of 233 mΩ (VGS @-4.5 V) and its nominal Gate-Source Voltage is ±20V.
FDC3535 MOSFET Features
Max rDS(on) = 183 mΩ at VGS = -10 V, ID = -2.1 A
Max rDS(on) = 233 mΩ at VGS = -4.5 V, ID = -1.9 A
High-performance trench technology for extremely low rDS(on)
High power and current handling capability in a widely used surface mount package
Fast switching speed
100% UIL Tested
RoHS Compliant
FDC3535 MOSFET Applications
IGBTs and MOSFETs
Inductors
Bridge Configurations
Synchronous Rectifiers
AC Motor Speed Control
Switched Reluctance Motor Drivers
High-side P-Channel Devices
Dual Forward Converters
Current Control
