FDC2512

FDC2512 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDC2512
  • Package: SOT-23-6 Thin, TSOT-23-6
  • Datasheet: pdf
  • Stock: 5000
  • Description: FDC2512 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SOT-23-6 Thin, TSOT-23-6
Number of Pins 6
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2017
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 6
Termination SMD/SMT
ECCN Code EAR99
Resistance 425MOhm
Subcategory FET General Purpose Power
Voltage - Rated DC 150V
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form GULL WING
Current Rating 1.4A
Number of Elements 1
Number of Channels 1
Voltage 150V
Power Dissipation-Max 1.6W Ta
Element Configuration Single
Current 14A
Operating Mode ENHANCEMENT MODE
Power Dissipation 1.6W
Turn On Delay Time 6.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 425m Ω @ 1.4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 344pF @ 75V
Current - Continuous Drain (Id) @ 25°C 1.4A Ta
Gate Charge (Qg) (Max) @ Vgs 11nC @ 10V
Rise Time 3.5ns
Drive Voltage (Max Rds On,Min Rds On) 6V 10V
Vgs (Max) ±20V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 22 ns
Continuous Drain Current (ID) 1.4A
Threshold Voltage 2.6V
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 150V
Dual Supply Voltage 150V
Max Junction Temperature (Tj) 150°C
Nominal Vgs 2.6 V
Height 1.1mm
Length 3mm
Width 1.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 15 Weeks

FDC2512 Overview


The maximum input capacitance of this device is 344pF @ 75V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.In this device, the drain current (ID) is equal to the continuous current transistor can conduct.A drainage-to-source breakdown voltage corresponds to the voltage at which a specified value of ID flows, where VGS is 150V, and this device has a drainage-to-source breakdown voltage of 150VV.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 22 ns.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 6.5 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 2.6V threshold voltage. A device like this reduces its overall power consumption when it uses drive voltage (6V 10V).

FDC2512 Features


a continuous drain current (ID) of 1.4A
a drain-to-source breakdown voltage of 150V voltage
the turn-off delay time is 22 ns
a threshold voltage of 2.6V

FDC2512 Applications


There are a lot of ON Semiconductor FDC2512 applications of single MOSFETs transistors.

  • DC-to-DC converters
  • Motor drives and Uninterruptible Power Supplies
  • Server power supplies
  • Industrial Power Supplies
  • Lighting
  • Motor Drives and Uninterruptible Power Supples
  • LCD/LED TV
  • Consumer Appliances
  • Uninterruptible Power Supply
  • AC-DC Power Supply

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