FDBL0065N40

FDBL0065N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDBL0065N40
  • Package: 8-PowerSFN
  • Datasheet: pdf
  • Stock: 7328
  • Description: FDBL0065N40 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Surface Mount
Mounting Type Surface Mount
Package / Case 8-PowerSFN
Number of Pins 8
Weight 850.0521mg
Transistor Element Material SILICON
Operating Temperature -55°C~175°C TJ
Packaging Tape & Reel (TR)
Published 2013
Series PowerTrench®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 8
ECCN Code EAR99
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Terminal Position DUAL
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) 245
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Power Dissipation-Max 429W Tj
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Case Connection DRAIN
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 0.65m Ω @ 80A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 15900pF @ 25V
Current - Continuous Drain (Id) @ 25°C 300A Tc
Gate Charge (Qg) (Max) @ Vgs 296nC @ 10V
Drain to Source Voltage (Vdss) 40V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 300A
JEDEC-95 Code MO-299A
Drain-source On Resistance-Max 0.00065Ohm
DS Breakdown Voltage-Min 40V
Avalanche Energy Rating (Eas) 1064 mJ
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDBL0065N40 Description


The FDBL0065N40 is a PowerTrench? N-Channel MOSFET. A current channel is created by electrons in an N-Channel MOSFET. When the MOSFET is active and switched on, electrons can move fast and readily via the current. The mobility of the carriers in N-Channel MOSFETs is approximately 2 to 3 times higher than in P-channel MOSFETs for the same RDS(on) value, thus the P-Channel chip must be 2 to 3 times the size of the N-Channel chip. As a result, MOSFET transistor N-Channels are frequently preferred for high current applications.

FDBL0065N40 Features



? Typical RDS(on) = 0.5m at VGS= 10V, ID = 80A

? Typical QG(tot) = 220nC at VGS =10V, ID = 80A

? UIS Capability

? High-performance

? RoHS Compliant

FDBL0065N40 Applications



? Drive for industrial motors

? Power Supply for Industry

? Automation in Industry

? Battery-powered equipment

? Battery Security

? Inverters for Solar

? Energy Inverters and UPS

? Storage of energy

? Switch to Load

In Stock

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