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| Parameters | |
|---|---|
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 1 day ago) |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 2 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2006 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| Termination | SMD/SMT |
| ECCN Code | EAR99 |
| Resistance | 2.5MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 40V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 80A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 23 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 2.5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 15000pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 28A Ta 120A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 280nC @ 10V |
| Rise Time | 24ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 17.9 ns |
| Turn-Off Delay Time | 75 ns |
| Reverse Recovery Time | 52 ns |
| Continuous Drain Current (ID) | 28A |
| Threshold Voltage | 2.8V |
| Gate to Source Voltage (Vgs) | 20V |
| Drain to Source Breakdown Voltage | 40V |
| Dual Supply Voltage | 40V |
| Avalanche Energy Rating (Eas) | 947 mJ |
| Nominal Vgs | 2.8 V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 9.65mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The N-channel MOSFET FDB8441 is manufactured using on Semiconductor's advanced POWERTRENCH process, which is tailor-made to minimize ON-state resistance while maintaining excellent switching performance.
Typ rDS(on) = 1.9mΩ at VGS = 10V, ID = 80A
Typ Qg(10) = 215nC at VGS = 10V
Low Miller Charge
Low Qrr Body Diode
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
RoHS Compliant
This product is general usage and suitable for many different applications.
Please send RFQ , we will respond immediately.