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FDB15N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDB15N50
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 9644
- Description: FDB15N50 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 10 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 6 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2003 |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 380mOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 500V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 15A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 300W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 300W |
| Case Connection | DRAIN |
| Turn On Delay Time | 9 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 380m Ω @ 7.5A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 1850pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 15A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 41nC @ 10V |
| Rise Time | 5.4ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 5 ns |
| Turn-Off Delay Time | 26 ns |
| Continuous Drain Current (ID) | 15A |
| Threshold Voltage | 3.4V |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 500V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Avalanche Energy Rating (Eas) | 760 mJ |
| Nominal Vgs | 3.4 V |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 11.33mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FDB15N50 Description
UniFETTM:MOSFET is a high voltage MOSFET series based on flat stripe and DMOS technology. The MOSFET is designed to reduce on-resistance and provide better switching performance and higher avalanche energy intensity. The device family is suitable for switching power supply converter applications such as power factor correction (PFC), flat panel display (FPD) TV power supplies, ATX and electronic lamp ballasts.
FDB15N50 Features
Low gate charge Qg results in simple drive requirement ( Typ. 33nC)
Improved Gate, avalanche and high reapplied dv/dt ruggedness
Reduced RDS(on) ( 330m? ( Typ.)@ VGS = 10V, ID = 7.5A)
Reduced Miller capacitance and low Input capacitance ( Typ. Crss = 16pF)
Improved switching speed with low EMI
175oC rated junction temperature
FDB15N50 Applications
This product is general usage and suitable for many different applications.
