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ContactFDB035AN06A0
FDB035AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FDB035AN06A0
- Package: TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
- Datasheet:
- Stock: 5425
- Description: FDB035AN06A0 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Gate to Source Voltage (Vgs) | 20V |
| Drain Current-Max (Abs) (ID) | 22A |
| Drain to Source Breakdown Voltage | 60V |
| Avalanche Energy Rating (Eas) | 625 mJ |
| Height | 4.83mm |
| Length | 10.67mm |
| Width | 11.33mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 8 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 4 days ago) |
| Contact Plating | Tin |
| Mount | Surface Mount |
| Mounting Type | Surface Mount |
| Package / Case | TO-263-3, D2Pak (2 Leads + Tab), TO-263AB |
| Number of Pins | 3 |
| Weight | 1.31247g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~175°C TJ |
| Packaging | Tape & Reel (TR) |
| Published | 2002 |
| Series | PowerTrench® |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 2 |
| ECCN Code | EAR99 |
| Resistance | 3.5MOhm |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 60V |
| Technology | MOSFET (Metal Oxide) |
| Terminal Form | GULL WING |
| Current Rating | 80A |
| JESD-30 Code | R-PSSO-G2 |
| Number of Elements | 1 |
| Power Dissipation-Max | 310W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 310W |
| Case Connection | DRAIN |
| Turn On Delay Time | 15 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 3.5m Ω @ 80A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 6400pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 22A Ta 80A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 124nC @ 10V |
| Rise Time | 93ns |
| Drive Voltage (Max Rds On,Min Rds On) | 6V 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 13 ns |
| Turn-Off Delay Time | 38 ns |
| Continuous Drain Current (ID) | 80A |
| Threshold Voltage | 4V |
FDB035AN06A0 Description
FDB035AN06A0 is an N-channel PowerTrench? MOSFET manufactured by onsemi. The N-channel MOSFET FDB035AN06A0 is produced using the advanced PowerTrench? process. It is suitable for use in synchronous rectification for ATX/server/telecom PSU and battery protection circuits. The FDB035AN06A0 operates within ambient temperatures from -55 to 175°C and with a power dissipation of 310W.
FDB035AN06A0 Features
Low Miller Charge
Low Qrr Body Diode
RDS(on) = 3.2m? (Typ.) @ VGS = 10V, ID = 80A
QG(tot) = 95nC (Typ.) @ VGS = 10V
UIS Capability (Single Pulse and Repetitive Pulse)
Qualified to AEC Q101
FDB035AN06A0 Applications
Synchronous Rectification for ATX / Server I Telecom PSU
Battery Protection Circuit
Motor drives and Uninterruptible Power Supplies
AC-DC Merchant Power Supply - Desktop PC
AC-DC Merchant Power Supply - Servers & Workstations
