FDA70N20

FDA70N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FDA70N20
  • Package: TO-3P-3, SC-65-3
  • Datasheet: pdf
  • Stock: 2696
  • Description: FDA70N20 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 7 Weeks
Lifecycle Status ACTIVE (Last Updated: 4 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
Series UniFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 35MOhm
Terminal Finish Tin (Sn)
Additional Feature FAST SWITCHING
Subcategory FET General Purpose Power
Voltage - Rated DC 200V
Technology MOSFET (Metal Oxide)
Current Rating 70A
Number of Elements 1
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Turn On Delay Time 71 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 35m Ω @ 35A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 3970pF @ 25V
Current - Continuous Drain (Id) @ 25°C 70A Tc
Gate Charge (Qg) (Max) @ Vgs 86nC @ 10V
Rise Time 235ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 39 ns
Turn-Off Delay Time 65 ns
Continuous Drain Current (ID) 70A
Threshold Voltage 5V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 200V
Pulsed Drain Current-Max (IDM) 280A
Nominal Vgs 5 V
Height 20.1mm
Length 15.8mm
Width 5mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FDA70N20 Overview


A device's maximal input capacitance is 3970pF @ 25V, which is defined as the capacitance between its input terminals with either input grounded.The drain current is the maximum continuous current the device can conduct, and this device has 70A continuous drain current (ID).Using VGS=200V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 200V (that is, no charge flow from drain to source).Its turn-off delay time is 65 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Its maximum pulsed drain current is 280A, which is also its maximum rating peak drainage current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 71 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Activation of any electrical operation happens at threshold voltage, and this transistor has 5V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FDA70N20 Features


a continuous drain current (ID) of 70A
a drain-to-source breakdown voltage of 200V voltage
the turn-off delay time is 65 ns
based on its rated peak drain current 280A.
a threshold voltage of 5V

FDA70N20 Applications


There are a lot of ON Semiconductor FDA70N20 applications of single MOSFETs transistors.

  • Server power supplies
  • Motor drives and Uninterruptible Power Supplies
  • LCD/LED TV
  • Consumer Appliances
  • LCD/LED/ PDP TV Lighting
  • Motor control
  • Power Tools
  • AC-DC Power Supply
  • Synchronous Rectification
  • Lighting

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