FCPF9N60NT

FCPF9N60NT Overview

As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1240pF @ 100V.The drain current is?the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 9A. In this device, the drain-source breakdown voltage is 600V and VGS=600V, so the drain-source breakdown voltage is 600V in this case.As shown in the table below, the drain current of this device is 9A.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 36.9 ns.IDM is the?maximum rated peak drain current?for a power MOSFET, and its maximal pulsed drain current is 27A.Turn-on delay time is?the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 12.7 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.By using drive voltage (10V), this device helps reduce its overall power consumption.

FCPF9N60NT Features

a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 36.9 ns
based on its rated peak drain current 27A.

FCPF9N60NT Applications

There are a lot of ON Semiconductor FCPF9N60NT applications of single MOSFETs transistors.

• Synchronous Rectification for ATX 1 Server I Telecom PSU
• Industrial Power Supplies
• General Purpose Interfacing Switch
• Lighting, Server, Telecom and UPS.
• AC-DC Power Supply
• Telecom 1 Sever Power Supplies
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
• Power Tools
• Motor drives and Uninterruptible Power Supplies
• Lighting