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ContactFCPF7N60NT
FCPF7N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCPF7N60NT
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 3860
- Description: FCPF7N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | SupreMOS™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 600MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 30.5W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 30.5W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 12 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 520m Ω @ 3.4A, 10V |
| Vgs(th) (Max) @ Id | 4V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 960pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 6.8A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 35.6nC @ 10V |
| Rise Time | 6ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 12 ns |
| Turn-Off Delay Time | 35 ns |
| Continuous Drain Current (ID) | 6.8A |
| Threshold Voltage | 2V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 20.4A |
| Avalanche Energy Rating (Eas) | 79.4 mJ |
| Height | 16.07mm |
| Length | 10.36mm |
| Width | 4.9mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
FCPF7N60NT Description
The SupreMOS? MOSFET FCPF7N60NT from ON Semiconductor has a voltage of 600V. SupreMOS? MOSFETs are the next generation of high voltage super-junction (SJ) technology, with a deep trench filling method that sets them apart from traditional SJ MOSFETs. Lowest Rsp on-resistance, improved switching performance, and durability are all provided by this modern technology and perfect process control. SupreMOS MOSFETs are well-suited to high-frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF7N60NT Features
RDS(on) = 460m? ( Typ.) @ VGS = 10V, ID = 3.4A
Ultra low gate charge ( Typ. Qg = 17.8nC )
Low effective output capacitance ( Typ. Coss.eff = 91pF )
100% avalanche tested
RoHS compliant
FCPF7N60NT Applications
General-purpose amplifier
Switching applications
Power management
Industrial
