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ContactFCPF7N60
FCPF7N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCPF7N60
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 9289
- Description: FCPF7N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 3 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2008 |
| Series | SuperFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 600MOhm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Current Rating | 7A |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 31W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 31W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 35 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 600m Ω @ 3.5A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 920pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 7A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V |
| Rise Time | 55ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 32 ns |
| Turn-Off Delay Time | 75 ns |
| Continuous Drain Current (ID) | 7A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain Current-Max (Abs) (ID) | 7A |
| Drain to Source Breakdown Voltage | 600V |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCPF7N60 Description
Fairchild Semiconductor's SuperFET? MOSFET family is the first generation of high voltage supe r-junction (SJ) MOSFETs that use charge balance technology for remarkable low on-resistance and lowe r gate cha rge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, Supe rFET MOSFETs are well-suited to switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power.
FCPF7N60 Features
?650 V @ 150oC Tj
?RDs(on)=530 mQ (Typ. RDs(on)=530 mQ (Typ. RDs(on)=530
?Extremely Low Gate Charge (Qg = 23 nC)
?Low Effective Output Capacitance (Coss(eff.)=60 pF)
?Avalanche T ested is 100 percent Avalanche
?RoHS (Restriction of Hazardous Substances) Compliant
FCPF7N60 Applications
?TV (LCD/LED/PDP)
? AC-DC Power Supply ? Solar Inverter
