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ContactFCPF20N60
FCPF20N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCPF20N60
- Package: TO-220-3 Full Pack
- Datasheet:
- Stock: 3671
- Description: FCPF20N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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- Payment:
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| Parameters | |
|---|---|
| Factory Lead Time | 13 Weeks |
| Lifecycle Status | ACTIVE, NOT REC (Last Updated: 3 days ago) |
| Contact Plating | Tin |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 Full Pack |
| Number of Pins | 3 |
| Weight | 2.27g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | SuperFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Not For New Designs |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Resistance | 190MOhm |
| Voltage - Rated DC | 600V |
| Technology | MOSFET (Metal Oxide) |
| Current Rating | 20A |
| Number of Elements | 1 |
| Power Dissipation-Max | 39W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 39W |
| Case Connection | ISOLATED |
| Turn On Delay Time | 62 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 190m Ω @ 10A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 3080pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 98nC @ 10V |
| Rise Time | 140ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 65 ns |
| Turn-Off Delay Time | 230 ns |
| Continuous Drain Current (ID) | 20A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 60A |
| Avalanche Energy Rating (Eas) | 690 mJ |
| Height | 9.19mm |
| Length | 10.16mm |
| Width | 4.7mm |
| Radiation Hardening | No |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCPF20N60 Description
Fairchild Semiconductor's FCPF20N60 is the first generation of high-voltage super-junction (SJ) MOSFETs that use charge balancing technology to provide low on-resistance and lower gate charge performance. This technology is designed to reduce conducti on loss, improve switching performance, increase dv/dt rate, and increase available energy. SuperFET MOSFETs are hence ideal for switching power applications including PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
FCPF20N60 Features
650V @ Tj = 150°C
Rds(o n) = 150 mQ type
Type Qg = 75 nC) Ultra Low Gate Charge
Coss(eff) = 165 pF) Low Effective Output Capacitance
100% Avalanche Approved
FCPF20N60 Applications
Solar Inverter
