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FCPF16N60
  • FCPF16N60

FCPF16N60

FCPF16N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCPF16N60
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 6272
  • Description: FCPF16N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 43 Weeks
Lifecycle Status ACTIVE, NOT REC (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET™
JESD-609 Code e3
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 260MOhm
Terminal Finish Tin (Sn)
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 37.9W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 37.9W
Case Connection ISOLATED
Turn On Delay Time 42 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 260m Ω @ 8A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2250pF @ 25V
Current - Continuous Drain (Id) @ 25°C 16A Tc
Gate Charge (Qg) (Max) @ Vgs 70nC @ 10V
Rise Time 130ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 90 ns
Turn-Off Delay Time 165 ns
Continuous Drain Current (ID) 16A
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 48A
Height 9.4mm
Length 10.1mm
Width 4.7mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FCPF16N60 Description


FCPF16N60 is an N-Channel SUPERFET? Power MOSFET. SuperFET? is, ON Semiconductor's proprietary, a new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. The onsemi MOSFET FCPF16N60 has been tailored to minimize conduction loss, provide superior switching performance, and withstand extreme dv/dt rate and higher avalanche energy. Consequently, the SuperFET FCPF16N60 is suitable for various AC/DC power converters in switching mode operation for system miniaturization and higher efficiency.



FCPF16N60 Features


  • 650V @TJ = 150°C

  • Typ. Rds(on) = 0.22O

  • Ultra low gate charge (typ. Qg=55nC)

  • Low effective output capacitance (typ. Coss.eff=110pF)

  • 100% avalanche tested



FCPF16N60 Applications


  • Solar Inverter

  • AC-DC Power Supply

  • electric vehicle

  • power large loads

  • power three-phase loads


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