FCPF13N60NT

FCPF13N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCPF13N60NT
  • Package: TO-220-3 Full Pack
  • Datasheet: pdf
  • Stock: 1658
  • Description: FCPF13N60NT datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 3 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack
Number of Pins 3
Weight 2.27g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
Series SuperMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 33.8W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 33.8W
Case Connection ISOLATED
Turn On Delay Time 14.5 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 258m Ω @ 6.5A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1765pF @ 100V
Current - Continuous Drain (Id) @ 25°C 13A Tc
Gate Charge (Qg) (Max) @ Vgs 39.5nC @ 10V
Rise Time 10.6ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 9.8 ns
Turn-Off Delay Time 45 ns
Continuous Drain Current (ID) 13A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain-source On Resistance-Max 0.258Ohm
Drain to Source Breakdown Voltage 600V
Height 15.9mm
Length 10.16mm
Width 4.7mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
FCPF13N60NT Description

FCPF13N60NT is an N-channel MOSFET WITH 600V. The SupreMOS? MOSFET FCPF13N60NT is the next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. The advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness. SupreMOS MOSFET is suitable for high frequency switching power converter applications such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications.

FCPF13N60NT Features

Low effective output capacitance ( Typ. Coss.eff = 145pF )
RDS(on) = 244m? ( Typ.) @ VGS = 10V, ID = 6.5A
Ultra low gate charge ( Typ. Qg = 30.4nC )
100% avalanche tested
RoHS compliant

FCPF13N60NT Applications

LCD/LED/PDP TV
Lighting
Solar Inverter
AC-DC Power Supply
ATX power applications

In Stock

Please send RFQ , we will respond immediately.