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FCP4N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCP4N60
- Package: TO-220-3
- Datasheet:
- Stock: 6227
- Description: FCP4N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 2 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-220-3 |
| Number of Pins | 3 |
| Weight | 1.8g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2004 |
| Series | SuperFET™ |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| Termination | Through Hole |
| ECCN Code | EAR99 |
| Resistance | 1.2Ohm |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Qualification Status | Not Qualified |
| Number of Elements | 1 |
| Power Dissipation-Max | 50W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 50mW |
| Turn On Delay Time | 16 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 1.2 Ω @ 2A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 540pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 3.9A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 16.6nC @ 10V |
| Rise Time | 45ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±30V |
| Fall Time (Typ) | 30 ns |
| Turn-Off Delay Time | 36 ns |
| Continuous Drain Current (ID) | 3.9A |
| Threshold Voltage | 5V |
| JEDEC-95 Code | TO-220AB |
| Gate to Source Voltage (Vgs) | 30V |
| Drain to Source Breakdown Voltage | 600V |
| Dual Supply Voltage | 600V |
| Nominal Vgs | 5 V |
| Height | 16.51mm |
| Length | 10.67mm |
| Width | 4.83mm |
| REACH SVHC | No SVHC |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
FCP4N60 Description
The FCP4N60 is a high voltage super-junction (SJ) MOSFET family with an N-channel SuperFET? MOSFET operating at 600V that uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. With this technology, conduction loss is minimized while switching performance, dv/dt rate, and avalanche energy are all improved. As a result, SuperFET MOSFET is ideal for switching power uses such PFC, server/telecom power, FPD TV power, ATX power, and industrial power uses. This product is all-purpose and appropriate for a wide range of uses.
FCP4N60 Features
Ultra low gate charge
100% Avalanche tested
Low effective output capacitance
FCP4N60 Applications
Industrial
Alternative Energy
Enterprise systems
Power Management
Consumer Electronics
Communications & Networking
