FCP36N60N

FCP36N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCP36N60N
  • Package: TO-220-3
  • Datasheet: pdf
  • Stock: 6626
  • Description: FCP36N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-3
Number of Pins 3
Weight 2.421g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series SupreMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Resistance 90MOhm
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 312W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 312W
Turn On Delay Time 23 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 90m Ω @ 18A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 4785pF @ 100V
Current - Continuous Drain (Id) @ 25°C 36A Tc
Gate Charge (Qg) (Max) @ Vgs 112nC @ 10V
Rise Time 22ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 94 ns
Continuous Drain Current (ID) 36A
Threshold Voltage 2V
JEDEC-95 Code TO-220AB
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Height 16.51mm
Length 10.67mm
Width 4.83mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FCP36N60N MOSFET Description


With a maximum Drain-Source voltage of up to 600 V and a Drain current (continuous) capability of up to 36 A, the FCP36N60N MOSFET is competent to switch most high-current, high-power loads. Further, this device has low on-resistance: 95 mΩ, which is sufficient for many cutting-edge demanding applications where low Drain on-resistance is needed.



FCP36N60N MOSFET Features


  • 100% avalanche tested

  • Low effective output capacitance ( Typ. Coss.eff = 361pF )

  • RoHS compliant

  • RDS(on) = 81m? ( Typ.) @ VGS = 10V, ID = 18A

  • Ultra low gate charge ( Typ. Qg = 86nC )



FCP36N60N MOSFET Applications


  • Power Converters with Multi-Megahertz Operation

  • Solar Inverters

  • Switching

  • Buck Converters

  • Three-Phase Bridge for Brushless DC Motor Control

  • Computing Systems

  • Automotive

  • Up to 12s Battery Power Tools

  • Telecoms

  • LV Motor Control

  • Other Half and Full-Bridge Topologies

In Stock

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