FCH47N60F-F133

FCH47N60F-F133 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCH47N60F-F133
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 7284
  • Description: FCH47N60F-F133 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Power Dissipation-Max 417W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 417W
Turn On Delay Time 185 ns
FET Type N-Channel
Rds On (Max) @ Id, Vgs 70m Ω @ 23.5A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 8000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 47A Tc
Gate Charge (Qg) (Max) @ Vgs 270nC @ 10V
Rise Time 450ns
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 160 ns
Turn-Off Delay Time 520 ns
Continuous Drain Current (ID) 47A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 650V
Height 20.6mm
Length 15.6mm
Width 4.7mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Factory Lead Time 12 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Operating Temperature -55°C~150°C TJ
Packaging Tube
Series SuperFET™
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Resistance 73MOhm
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Base Part Number FCH47N60
Number of Elements 1

FCH47N60F-F133 Overview


Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 8000pF @ 25V maximal input capacitance.This device conducts a continuous drain current (ID) of 47A, which is the maximum continuous current transistor can conduct.This device has 650V drain-to-source breakdown voltage, where VDS corresponds to the ID at which a specified value of ID flows and VGS equals 650V.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 520 ns.Input capacitance charge delays drain current conduction until the time it takes to charge input capacitance reaches 185 ns.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Threshold voltage is?the point at which an electrical device is set to activate any one of its operations, and this transistor has 3V threshold voltage. Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 600V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

FCH47N60F-F133 Features


a continuous drain current (ID) of 47A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 520 ns
a threshold voltage of 3V
a 600V drain to source voltage (Vdss)

FCH47N60F-F133 Applications


There are a lot of ON Semiconductor FCH47N60F-F133 applications of single MOSFETs transistors.

  • Lighting, Server, Telecom and UPS.
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • AC-DC Power Supply
  • Battery Protection Circuit
  • Motor Drives and Uninterruptible Power Supples
  • DC-to-DC converters
  • LCD/LED/ PDP TV Lighting
  • DC/DC converters
  • Solar Inverter

In Stock

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