FCH22N60N

FCH22N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCH22N60N
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 9977
  • Description: FCH22N60N datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 13 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 week ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2008
Series SupreMOS™
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code not_compliant
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Qualification Status Not Qualified
Number of Elements 1
Power Dissipation-Max 205W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 205W
Turn On Delay Time 16.9 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 165m Ω @ 11A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 1950pF @ 100V
Current - Continuous Drain (Id) @ 25°C 22A Tc
Gate Charge (Qg) (Max) @ Vgs 45nC @ 10V
Rise Time 16.7ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
Fall Time (Typ) 4 ns
Turn-Off Delay Time 49 ns
Continuous Drain Current (ID) 22A
Threshold Voltage 3V
Gate to Source Voltage (Vgs) 30V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 66A
Avalanche Energy Rating (Eas) 672 mJ
Height 21mm
Length 15.95mm
Width 5.03mm
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FCH22N60N Overview


Avalanche breakdown occurs when energy is applied to the MOSFET, and the avalanche energy ratings (Eas) are 672 mJ.Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 1950pF @ 100V.Its continuous drain current is 22A for this device. Drain current refers to the capacity of the device to conduct continuous current.Drain-source breakdown voltage is?the VDS at which a specified value of ID flows, with VGS=600V.?And this device has 600V drain to source breakdown voltage.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 49 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 66A.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 16.9 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 30V.In this case, the threshold voltage of the transistor is 3V, which means that it will not activate any of its functions when its threshold voltage reaches 3V.Its overall power consumption can be reduced by using drive voltage (10V).

FCH22N60N Features


the avalanche energy rating (Eas) is 672 mJ
a continuous drain current (ID) of 22A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 49 ns
based on its rated peak drain current 66A.
a threshold voltage of 3V

FCH22N60N Applications


There are a lot of ON Semiconductor FCH22N60N applications of single MOSFETs transistors.

  • Telecom 1 Sever Power Supplies
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Server power supplies
  • Motor Drives and Uninterruptible Power Supples
  • Consumer Appliances
  • DC-to-DC converters
  • Load switching
  • Micro Solar Inverter
  • General Purpose Interfacing Switch
  • Lighting

In Stock

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