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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2013 |
| Series | FRFET®, SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Number of Elements | 1 |
| Power Dissipation-Max | 481W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Power Dissipation | 481W |
| Turn On Delay Time | 43 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 72m Ω @ 26A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 8660pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 52A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
| Rise Time | 38ns |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 25 ns |
| Turn-Off Delay Time | 140 ns |
| Continuous Drain Current (ID) | 52A |
| JEDEC-95 Code | TO-247AB |
| Gate to Source Voltage (Vgs) | 20V |
| Drain-source On Resistance-Max | 0.072Ohm |
| Drain to Source Breakdown Voltage | 600V |
| Pulsed Drain Current-Max (IDM) | 156A |
| Avalanche Energy Rating (Eas) | 1128 mJ |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| Radiation Hardening | No |
| RoHS Status | ROHS3 Compliant |
| Lead Free | Lead Free |
The FCH072N60F is an 600 V, 52 A, 72 mΩ N-Channel SuperFET? II FRFET? MOSFET. Fairchild Semiconductor's SuperFET? II MOSFET of FCH072N60F is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve remarkable low on-resistance and lower gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the SuperFET II MOSFET is well suited for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of SuperFETII FRFET? MOSFETs can eliminate unnecessary components and improve system reliability.
? Low Effective Output Capacitance (Typ. Coss(eff.) = 441 pF)
? 100% Avalanche Tested
? RoHS Compliant
? 650 V @ TJ = 150°C
? Typ. RDS(on) = 65 mΩ
? Ultra Low Gate Charge (Typ. Qg = 165 nC)
? Switching Applications
? Automotive Electronics
? As Power Converters
? Accelerometer
? Amplifiers
Please send RFQ , we will respond immediately.