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FCH043N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCH043N60
- Package: TO-247-3
- Datasheet:
- Stock: 598
- Description: FCH043N60 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-3 |
| Number of Pins | 3 |
| Weight | 6.39g |
| Transistor Element Material | SILICON |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Published | 2014 |
| Series | SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Number of Terminations | 3 |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| Subcategory | FET General Purpose Power |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Reach Compliance Code | not_compliant |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Number of Elements | 1 |
| Number of Channels | 1 |
| Power Dissipation-Max | 592W Tc |
| Element Configuration | Single |
| Operating Mode | ENHANCEMENT MODE |
| Turn On Delay Time | 46 ns |
| FET Type | N-Channel |
| Transistor Application | SWITCHING |
| Rds On (Max) @ Id, Vgs | 43m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id | 3.5V @ 250μA |
| Input Capacitance (Ciss) (Max) @ Vds | 12225pF @ 400V |
| Current - Continuous Drain (Id) @ 25°C | 75A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 215nC @ 10V |
| Rise Time | 36ns |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Fall Time (Typ) | 6 ns |
| Turn-Off Delay Time | 162 ns |
| Continuous Drain Current (ID) | 75A |
| JEDEC-95 Code | TO-247AB |
| Gate to Source Voltage (Vgs) | 20V |
| Pulsed Drain Current-Max (IDM) | 225A |
| DS Breakdown Voltage-Min | 600V |
| Avalanche Energy Rating (Eas) | 2025 mJ |
| Height | 20.82mm |
| Length | 15.87mm |
| Width | 4.82mm |
| RoHS Status | ROHS3 Compliant |
FCH043N60 Description
The SUPERFET II MOSFET is a new high voltage super-junction (SJ) MOSFET family from ON Semiconductor that uses charge balance technology to achieve exceptional low on-resistance and lower gate charge performance. This cutting-edge technology is designed to reduce conduction loss, offer greater switching performance, endure extremely high dv/dt rates, and handle more energy from avalanches. In order to reduce system size and increase efficiency, SUPERFET II MOSFET is appropriate for various AC/DC power conversion.
FCH043N60 Features
Typ. RDS(on) = 37 m
600 V @ TJ = 150°C
Ultra Low Gate Charge (Typ. Qg = 163 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 730 pF)
100% Avalanche Tested
These Devices are Pb?Free and are RoHS Compliant
FCH043N60 Applications
Telecom / Sever Power Supplies
Industrial Power Supplies
