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ContactFCH041N65EFL4
FCH041N65EFL4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi
- Manufacturer: ON Semiconductor
- NO: 598-FCH041N65EFL4
- Package: TO-247-4
- Datasheet:
- Stock: 1091
- Description: FCH041N65EFL4 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)
- Delivery:
- Payment:
In Stock
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| Parameters | |
|---|---|
| Factory Lead Time | 12 Weeks |
| Lifecycle Status | ACTIVE (Last Updated: 5 days ago) |
| Mount | Through Hole |
| Mounting Type | Through Hole |
| Package / Case | TO-247-4 |
| Weight | 6.289g |
| Operating Temperature | -55°C~150°C TJ |
| Packaging | Tube |
| Series | FRFET®, SuperFET® II |
| JESD-609 Code | e3 |
| Pbfree Code | yes |
| Part Status | Active |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| ECCN Code | EAR99 |
| Terminal Finish | Tin (Sn) |
| HTS Code | 8541.29.00.95 |
| Technology | MOSFET (Metal Oxide) |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
| Power Dissipation-Max | 595W Tc |
| Element Configuration | Single |
| FET Type | N-Channel |
| Rds On (Max) @ Id, Vgs | 41m Ω @ 38A, 10V |
| Vgs(th) (Max) @ Id | 5V @ 7.6mA |
| Input Capacitance (Ciss) (Max) @ Vds | 12560pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 76A Tc |
| Gate Charge (Qg) (Max) @ Vgs | 298nC @ 10V |
| Drain to Source Voltage (Vdss) | 650V |
| Drive Voltage (Max Rds On,Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Continuous Drain Current (ID) | 76A |
| RoHS Status | ROHS3 Compliant |
FCH041N65EFL4 Description
SuperFET? II MOSFET is a brand-new high voltage super-junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on-resistance and lower gate charge performance. This technology is tailored to minimize conduction loss and provide superior switching performance, dv/dt rate, and higher avalanche energy. Consequently, SuperFET II MOSFET is very suitable for switching power applications such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications. SuperFET II FRFET? MOSFET’s optimized body diode reverse recovery performance can remove the additional component and improve system reliability.
FCH041N65EFL4 Features
RoHS Compliant
700 V @ TJ = 150°C
Typ. RDS(on) = 36 mΩ
100% Avalanche Tested
Ultra Low Gate Charge (Typ. Qg = 229 nC)
Low Effective Output Capacitance (Typ. Coss(eff.) = 631 pF)
FCH041N65EFL4 Applications
Solar inverter
LCD/LED/PDP TV
AC-DC Power Supplies
Telecom/Server/Power Supplies
