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FCH041N60F
  • FCH041N60F

FCH041N60F

FCH041N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi


  • Manufacturer: ON Semiconductor
  • NO: 598-FCH041N60F
  • Package: TO-247-3
  • Datasheet: pdf
  • Stock: 5381
  • Description: FCH041N60F datasheet pdf and Transistors - FETs, MOSFETs - Single product details from ON Semiconductor stock available at Feilidi(Kg)

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SPECIFICATIONS

Parameters
Factory Lead Time 15 Weeks
Lifecycle Status ACTIVE (Last Updated: 5 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Number of Pins 3
Weight 6.39g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2013
Series SuperFET® II
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory FET General Purpose Power
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 595W Tc
Element Configuration Single
Operating Mode ENHANCEMENT MODE
Power Dissipation 595W
Turn On Delay Time 63 ns
FET Type N-Channel
Transistor Application SWITCHING
Rds On (Max) @ Id, Vgs 41m Ω @ 38A, 10V
Vgs(th) (Max) @ Id 5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 14365pF @ 100V
Current - Continuous Drain (Id) @ 25°C 76A Tc
Gate Charge (Qg) (Max) @ Vgs 360nC @ 10V
Rise Time 66ns
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Fall Time (Typ) 53 ns
Turn-Off Delay Time 244 ns
Continuous Drain Current (ID) 76A
JEDEC-95 Code TO-247AB
Gate to Source Voltage (Vgs) 20V
Drain to Source Breakdown Voltage 600V
Pulsed Drain Current-Max (IDM) 228A
Avalanche Energy Rating (Eas) 2025 mJ
Height 20.82mm
Length 15.87mm
Width 4.82mm
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free

FCH041N60F Description

The FCH041N60F MOSFET is a brand-new high-voltage super-junction (SJ) MOSFET family that uses charge balance technology to achieve exceptional low on-resistance and low gate charge performance. This technology is designed to reduce conduction loss, improve switching performance, increase dv/dt rate, and increase avalanche energy. As a result, the FCH041N60F MOSFET is ideal for switching power applications such PFC, server/telecom power, FPD TV power, ATX power, and industrial power. The enhanced body diode reverse recovery performance of the FCH041N60F MOSFET can eliminate a component and improve system reliability.


FCH041N60F Features

  • 650 V @ TJ = 150°C

  • Typ. RDS(on) = 36 m

  • Ultra Low Gate Charge (Typ. Qg = 277 nC)

  • Low Effective Output Capacitance (Typ. Coss(eff.) = 748 pF)

  • 100% Avalanche Tested

  • This Device is Pb?Free and is RoHS Compliant


FCH041N60F Applications

  • Telecom / Server Power Supplies

  • Industrial Power Supplies

  • EV Charger

  • UPS / Solar

  • AC-DC Merchant Power Supply

  • AC-DC Merchant Power Supply - Servers & Workstations

  • Energy Generation & Distribution

  • External AC-DC Merchant Power Supply - Data Processing


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